BFT25A
NPN 5 GHz wideband transistor
Rev. 04 — 6 July 2004
Product data sheet
1. Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to 2 GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features
s
Low current consumption (100
µA
to 1 mA)
s
Low noise figure
s
Gold metallization ensures excellent reliability.
1.3 Quick reference data
Table 1:
Symbol
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
Quick reference data
Parameter
collector-base
voltage
collector-emitter
voltage
DC collector
current
total power
dissipation
DC current gain
transition
frequency
maximum
unilateral power
gain
noise figure
up to T
s
= 165
°C
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V;
T
amb
= 25
°C;
f = 500 MHz
I
C
= 0.5 mA; V
CE
= 1 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
=
Γ
opt
; I
C
= 0.5 mA;
V
CE
= 1 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
=
Γ
opt
; I
C
= 1 mA;
V
CE
= 1 V;
T
amb
= 25
°C;
f = 1 GHz
[1]
T
s
is the temperature at the soldering point of the collector tab.
[1]
Conditions
open emitter
open base
Min
-
-
-
-
50
3.5
Typ
-
-
-
-
80
5
Max
8
5
6.5
32
200
-
Unit
V
V
mA
mW
GHz
G
UM
-
15
-
dB
F
-
1.8
-
dB
-
2
-
dB
Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
2. Pinning information
Table 2:
Pin
Code: V10
1
2
3
base
emitter
collector
2
1
2
SOT23
sym021
Discrete pinning
Description
Simplified outline
3
1
Symbol
3
3. Ordering information
Table 3:
Ordering information
Package
Name
BFT25A
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4:
BFT25A
[1]
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Marking
Marking code
[1]
34*
Type number
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
up to T
s
= 165
°C
[1]
Min
-
-
-
-
-
−65
-
Max
8
5
2
6.5
32
+150
175
Unit
V
V
V
mA
mW
°C
°C
T
s
is the temperature at the soldering point of the collector tab.
9397 750 13399
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 6 July 2004
2 of 14
Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6:
Symbol
R
th(j-s)
[1]
Thermal characteristics
Parameter
from junction to soldering point
Conditions
[1]
Typ
260
Unit
K/W
T
s
is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
CBO
h
FE
f
T
Parameter
collector cut-off
current
DC current gain
transition
frequency
feedback
capacitance
maximum
unilateral power
gain
noise figure
Conditions
I
E
= 0 A; V
CB
= 5 V
I
C
= 0.5 mA; V
CE
= 1 V
I
C
= 1 mA; V
CE
= 1 V;
T
amb
= 25
°C;
f = 500 MHz
I
C
= i
c
= 0 A; V
CB
= 1 V;
f = 1 MHz
I
C
= 0.5 mA; V
CE
= 1 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
=
Γ
opt
; I
C
= 0.5 mA;
V
CE
= 1 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
=
Γ
opt
; I
C
= 1 mA;
V
CE
= 1 V;
T
amb
= 25
°C;
f = 1 GHz
[1]
[1]
Min
-
50
3.5
Typ
-
80
5
Max
50
200
-
Unit
nA
GHz
C
re
G
UM
-
-
0.3
15
0.45
-
pF
dB
F
-
1.8
-
dB
-
2
-
dB
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
= 10 log
------------------------------------------------------dB
2
2
(
1
–
S
11
) (
1
–
S
22
)
2
9397 750 13399
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 6 July 2004
3 of 14
Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
40
P
tot
(mW)
30
mbg247
100
h
FE
80
mcd138
60
20
40
10
20
0
0
50
100
150
T
s
(°C)
200
0
10
−3
10
−2
10
−1
1
I
C
(mA)
10
V
CE
= 1 V.
Fig 1. Power derating curve.
Fig 2. DC current gain as a function of collector
current.
mcd103
0.4
C
re
(pF)
0.3
6
f
T
(GHz)
4
mcd140
0.2
2
0.1
0
0
1
2
3
4
V
CB
(V)
5
0
0
1
2
3
I
C
(mA)
4
I
C
= i
c
= 0 A; f = 1 MHz.
V
CE
= 1 V; T
amb
= 25
°C;
f = 500 MHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
Fig 4. Transition frequency as a function of collector
current.
Figure 5, 6, 7
and
8,
G
UM
= maximum unilateral power gain; MSG = maximum stable gain.
9397 750 13399
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 6 July 2004
4 of 14
Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
25
gain
(dB)
20
G
UM
mcd104
20
gain
(dB)
15
G
UM
mcd105
15
MSG
10
10
5
5
MSG
0
0
0.5
1.0
1.5
2.0
0
0
0.5
1.0
1.5
2.0
I
C
(mA)
I
C
(mA)
V
CE
= 1 V; f = 500 MHz.
V
CE
= 1 V; f = 1 GHz.
Fig 5. Gain as a function of collector current.
Fig 6. Gain as a function of collector current.
50
gain
(dB)
40
G
UM
mcd106
50
gain
(dB)
40
G
UM
mcd107
30
30
MSG
20
MSG
20
10
G
max
0
10
10
2
10
3
f (MHz)
10
4
10
G
max
0
10
10
2
10
3
f (MHz)
10
4
V
CE
= 1 V; I
C
= 0.5 mA.
V
CE
= 1 V; I
C
= 1 mA.
Fig 7. Gain as a function of frequency.
Fig 8. Gain as a function of frequency.
9397 750 13399
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 04 — 6 July 2004
5 of 14
